240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated. Then, the external quantum efficiency (EQE) and light extraction efficiency (LEE) are systematically investigated by comparing size and edge effects. Here, it is revealed that the peak optical output power increases by 81.83% with the size shrinking from 50.0 to 25.0 μm. Thereinto, the LEE increases by 26.21% and the LEE enhancement mainly comes from the sidewall light extraction. Most notably, transverse-magnetic (TM) mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design. However, when it turns to 12.5 μm sized micro-LEDs, the output power is lower than 25.0 μm sized ones. The underlying mechanism is that even though protected by SiO₂ passivation, the edge effect which leads to current leakage and Shockley-Read-Hall (SRH) recombination deteriorates rapidly with the size further shrinking. Moreover, the ratio of the p-contact area to mesa area is much lower, which deteriorates the p-type current spreading at the mesa edge. These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm, which will pave the way for wide applications of deep ultraviolet (DUV) micro-LEDs.

Efficient and eco-friendly disinfection of air-borne human respiratory RNA viruses is pursued in both public environment and portable usage. The AlGaN-based deep ultraviolet (DUV) light-emission diode (LED) has high practical potentials because of its advantages of variable wavelength, rapid sterilization, environmental protection, and miniaturization. Therefore, whether the emission wavelength has effects on the disinfection as well as whether the device is feasible to sterilize various respiratory RNA viruses under portable conditions is crucial. Here, we fabricate AlGaN-based DUV LEDs with different wavelength on high-temperature-annealed (HTA) AlN/Sapphire templates and investigate the inactivation effects for several respiratory RNA viruses. The AlN/AlGaN superlattices are employed between the template and upper n-AlGaN to release the strong compressive stress (SCS), improving the crystal quality and interface roughness. DUV LEDs with the wavelength of 256, 265, and 278 nm, corresponding to the light output power of 6.8, 9.6, and 12.5 mW, are realized, among which the 256 nm-LED shows the most potent inactivation effect in human respiratory RNA viruses, including SARS-CoV-2, influenza A virus (IAV), and human parainfluenza virus (HPIV), at a similar light power density (LPD) of ~0.8 mW/cm² for 10 s. These results will contribute to the advanced DUV LED application of disinfecting viruses with high potency and broad spectrum in a portable and eco-friendly use.

Micro-nano optomechanical accelerometers are widely used in automobile, aerospace, and other industrial applications. Here, we fabricate mechanical sensing components based on an electrically pumped GaN light-emitting diode (LED) with a beam structure. The relationship between the blueshift of the electroluminescence (EL) spectra and the deformation of the GaN beam structure based on the quantum-confined Stark effect (QCSE) of the InGaN quantum well (QW) structure is studied by introducing an extra mass block. Under the equivalent acceleration condition, in addition to the elastic deformation of GaN-LED, a direct relationship exists between the LED’s spectral shift and the acceleration’s magnitude. The extra mass block (gravitational force: 7.55×10-11N) induced blueshift of the EL spectra is obtained and shows driven current dependency. A polymer sphere (PS; gravitational force: 3.427×10-12N) is placed at the center of the beam GaN-LED, and a blueshift of 0.061 nm is observed in the EL spectrum under the injection current of 0.5 mA. The maximum sensitivity of the acceleration is measured to be 0.02m/s2, and the maximum measurable acceleration is calculated to be 1.8×106m/s2. It indicates the simultaneous realization of high sensitivity and a broad acceleration measurement range. This work is significant for several applications, including light force measurement and inertial navigation systems with high integration ability.

Directionally scattered surface plasmon polaritons (SPPs) promote the efficiency of plasmonic devices by limiting the energy within a given spatial domain, which is one of the key issues to plasmonic devices. Benefitting from the magnetic response induced in high-index dielectric nanoparticles, unidirectionally scattered SPPs have been achieved via interference between electric and magnetic resonances excited in the particles. Yet, as the magnetic response in low-index dielectric nanoparticles is too weak, the directionally scattered SPPs are hard to detect. In this work, we demonstrate forward scattered SPPs in single low-index polystyrene (PS) nanospheres. We numerically illustrate the excitation mechanism of plasmonic induced electric and magnetic multipole modes, as well as their contributions to forward SPP scattering of single PS nanospheres. We also simulate the SPP scattering field distribution obtaining a forward-to-backward scattering intensity ratio of 50.26:1 with 1 μm PS particle. Then the forward scattered SPPs are experimentally visualized by Fourier transforming the real-space plasmonic imaging to k-space imaging. The forward scattered SPPs from low-index dielectric nanoparticles pave the way for SPP direction manipulation by all types of nanomaterials.

AlGaN solar-blind ultraviolet (SBUV) detectors have potential application in fire monitoring, corona discharge monitoring, or biological imaging. With the promotion of application requirements, there is an urgent demand for developing a high-performance vertical detector that can work at low bias or even zero bias. In this work, we have introduced a photoconductive gain mechanism into a vertical AlGaN SBUV detector and successfully realized it in a p-i-n photodiode via inserting a multiple-quantum-well (MQW) into the depletion region. The MQW plays the role of trapping holes and increasing carrier lifetime due to its strong hole confinement effect and quantum confinement Stark effect. Hence, the electrons can go through the detector multiple times, inducing unipolar carrier transport multiplication. Experimentally, an AlGaN SBUV detector with a zero-bias peak responsivity of about 0.425 A/W at 233 nm is achieved, corresponding to an external quantum efficiency of 226%, indicating the existence of internal current gain. When compared with the device without MQW structure, the gain is estimated to be about 103 in magnitude. The investigation provides an alternative and effective approach to obtain high current gain in vertical AlGaN SBUV detectors at zero bias.